Abstract:Extending cycling endurance and suppressing programming noise of phase-change random-access memory (PCRAM) are the key challenges with respect to the development of nonvolatile working memory and high-accuracy neuromorphic computing devices. However, the large-scale atomic migration along electrical pulse direction in the unconstrained three-dimensional phase transitions of the phase-change materials (PCMs) induces big resistance fluctuations upon repeated programming and renders the classic PCRAM devices into premature failure with limited cycling endurance. Previous efforts of superlattice-like and superlattice PCM schemes cannot effectively resolve such issues. In this work, we demonstrated that, through fine-tuning the sputtering techniques, a phase-change heterostructure (PCH) of Sb2Te3/TiTe2 can be successfully constructed. In contrast to its superlattice-like counterpart with inferior crystal quality, the well-textured PCH architecture ensures the reliable (well-confined) two-dimensional phase transitions, promoting an ultralow-noise and long-life operation of the PCRAM devices. Our study thus provides a useful reference for better manufacturing the PCH architecture and further exploring the excellent device performances and other new physics.

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Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Fullerene Thermal Insulation for Phase Change Memory

A Novel Edge Contact Type Cell for Phase Change RAM Using N-doped GeSbTe Films

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

Inductively Coupled Plasma Etching for Phase-Change Material with Superlattice-Like Structure in Phase Change Memory Device

Elevated-Confined Phase-Change Random Access Memory Cells

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures