Abstract:Asymmetric PCRAM structure with the upper contact opening at an offset to the bottom contact opening allowed us to improve the thermal distribution within the phase change layer and lower the reset current to 50% that of a conventional symmetrical structure. In terms of endurance, asymmetric cell lasted for 1.1 × 10 8 cycles which is at least 10X higher than the conventional symmetrical cell. These results were based on Ge 2 Sb 2 Te 5 as the phase change material. In this paper, we used nitrogen doped Ge 2 Sb 2 Te 5 [1] instead and the thickness of this phase change layer was 100 nm. During the sputtering of Ge 2 Sb 2 Te 5 , the Argon gas flow rate was fixed at 15 sccm while nitrogen flow rates of 0, 3, 4.5 and 6 sccm were introduced each time. Thus N2/Ar gas ratio of 0, 0.2, 0.3 and 0.4 were obtained respectively. After fabrication, the cell endurance of Asymmetric PCRAM cells incorporating Ge 2 Sb 2 Te 5 doped with varying concentrations of nitrogen was tested. During testing, the PCRAM was repeatedly Reset/Set and the resistances of the two states were recorded at every 100k cycles. The cell was considered to be functioning well when its Reset/Set resistance ratio was greater than 10. From experiments, N-doped asymmetric cell with N2/Ar gas ratio of 0.2 lasted 2.4 × 10 10 cycles which is 1000 times that of a conventional symmetrical PCRAM cells. The N2 doping concentration was also shown to be optimized when the N2/Ar gas ratio was fixed at 0.2. Higher doping concentrations with N2/Ar gas ratio of 0.3 and 0.4 decreased the cell endurance to 8.8 × 10 8 and 7.6 × 10 8 cycles respectively. Excessive doped nitrogen atoms might have degraded the phase change material, causing breakdown to occur sooner. N-doped conventional symmetrical PCRAM was also fabricated and its overwrite cycles were measured only up to 1.2 × 10 9 . With better thermal confinement, asymmetric PCRAM has proved to be better in endurance too. The above results were based on asymmetric PCRAM cells with 1 µm offset. [1] H. Horii et al, “A Novel Cell Technology Using N-doped GeSbTe Films For Phase Change RAM”, p. 177-178, VLSI Tech. 2003

A Novel Edge Contact Type Cell for Phase Change RAM Using N-doped GeSbTe Films

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

The Performance Of Ge2sb2te5 Material For Pcram Device

Influence of Nitrogen Doping Upon the Phase Change Characteristics and Optical Band Gap of Sb2te3 Thin Films

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Investigations of High Endurance Asymmetric Phase Change Random Access Memory

THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

A Nano-Scale-Sized 3d Element for Phase Change Memories

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge 3Sb 2Te 5 for phase-change memory application

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

The Effect of Thickness on Texture of Ge2Sb2Te5 Phase-Change Films

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory