Abstract:We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the heating scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device such that a non-uniform heating scheme promotes partial amorphization/crystallization for a wide range of pulse parameters enabling multiple resistance levels for data storage applications. Furthermore we find that fluctuations in the snap-back voltage and set/reset resistances in repeated switching experiments are related to the details of the current distribution such that a uniform current injection geometry (i.e. circular contact) favors more reproducible switching parameters. This shows that possible geometrical defects in nanoscale phase change memory devices may play an essential role in the performance of the smallest possible devices through modification of the exact current distribution in the active chalcogenide layer. We present a three-dimensional finite element model of the electro-thermal physics to provide insights into the underlying physical mechanisms of the switching dynamics as well as to quantitatively account for the scaling behaviour of the switching currents in both circular and rectangular contact geometries. The calculated temporal evolution of the heat distribution within the pulse duration shows distinct features in rectangular contacts providing evidence for locally hot spots at the sharp corners of the current injection site due to current crowding effects leading to the observed behaviour.

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Understanding CrGeTe3: an Abnormal Phase Change Material with Inverse Resistance and Density Contrast

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Thermally-induced nanoscale phase change in chalcogenide glass Cr2Ge2Te6 revealed by scanning tunneling microscopy

Electrical Switching Dynamics in Circular and Rectangular Ge2Sb2Te5 Nanopillar Phase Change Memory Devices

Investigation on non-rotating and non-volatile phase change memory

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

A Nano-Scale-Sized 3d Element for Phase Change Memories