Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge 3Sb 2Te 5 for phase-change memory application

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Crystallization Characteristic and Structure of Hafnium Addition in Germanium Antimony Thin Films for Phase Change Memory

Investigation on the Crystallization Properties and Structure of Oxygen-Doped Ge8sb92 Phase Change Thin Films

Influence of Nitrogen Doping Upon the Phase Change Characteristics and Optical Band Gap of Sb2te3 Thin Films

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Advantages of GeTeN material for phase change memory applications

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb<sub>2</sub>Te Thin Films for Phase Change Random Access Memory

Nitrogen-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films for nonvolatile memory