Abstract:Non-volatile memory, which can simultaneously store data and compute in memory, is a promising candidate to break through “memory bottleneck”. However, its operation speed and thermal stability are still contradictory and difficult to meet the requirement of in-memory computing especially in high-temperature applications. In this work, optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 material is proposed, where the picosecond laser is used to perform the information recording/erasing operation based on the reversible phase-change characteristics while resistance signal is detected to realize the information readout. Results imply that the Cr doped Ge2Sb2Te5 film with Cr concentration of 10.7 at. % has high crystallization temperature (289 °C) and ten-year data-retention temperature (221 °C), low density-change rate (2.3%) and small resistance drift coefficients (0.022 at 85 °C, 0.056 at 120 °C, 0.070 at 150 °C, and 0.00131 for the laser induced SET state). The corresponding memory device has the SET/RESET operation speeds of as fast as 1820 ps/13 ps accompanied by the RESET/SET resistance ratio of higher than two orders of magnitude. The structural analyses indicate that Cr doping can suppress the growth of grains and reduce the grain size, improving the thermal stability of amorphous Ge2Sb2Te5 thin film while the octahedral/defective octahedral motif ensures its fast phase-change speed. Therefore, Cr doped Ge2Sb2Te5 based optoelectronic hybrid phase-change memory with superior thermal stability and ultrafast operation speed may be one of the promising solutions for in-memory computing.

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Recipe for ultrafast and persistent phase-change memory materials

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Boosting crystallization speed in ultrathin phase-change bridge memory device using Sb2Te3

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Toward the Speed Limit of Phase-Change Memory