Abstract:Phase‐change memory is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with current manufacturing processes and the good scaling behavior. Despite intensive research efforts that are devoted to the modification of Ge2Sb2Te5 (GST) phase‐change material, the obtained improvements are still unsatisfactory for high‐performance applications. In this paper, SiC‐modification is first introduced to enhance the amorphous stability of GST without sacrificing its transition speed. Several enhancements can be demonstrated, including better thermal stability (10‐year data retention above 120 °C), lower RESET voltage (about 3.0 V at 20 ns pulse width), reduced volume change (smaller than 3.0%), and expected operation cycles (more than 1.0 × 105). According to the findings, the local bonding nature of Ge/Te atoms can be tuned by C/Si dopants through forming CGe and SiTe bonds. Apart from strengthening the atomic binding network for desirable data retention, the element interdiffusion is also effectively controlled and suppressed. Together with finer grains, smaller density change, and more uniform morphology, the modified structure transition finally contributes to the reduced switching voltage and long‐term endurance. Hence, it is envisaged that SiC‐doped GST with such advantages will give a competitive option for high‐density and high‐performance embedded memory.

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Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

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Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

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Characterization of Cr-doped Sb2 Te3 Films and Their Application to Phase-Change Memory

SiC‐Doped Ge2Sb2Te5 Phase‐Change Material: A Candidate for High‐Density Embedded Memory Application

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Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb<sub>2</sub>Te Thin Films for Phase Change Random Access Memory

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Improved Performances of Ge2sb2te5 Based Phase Change Memory by W Doping

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption.

Scandium Doped Ge2Sb2Te5 for High-Speed and Low-Power-consumption Phase Change Memory

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application