Abstract:Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb2Te3, GeTe, Sc2Te3, and TiTe2, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ternary tellurides by the simple mixing of binary inks. We demonstrate accurate and quantitative composition control, including prototype materials (Ge-Sb-Te) and emerging rare-earth-metal telluride-doped materials (Sc-Sb-Te). Spin-coating and annealing convert ink formulations into high-quality, phase-pure telluride films with preferred orientation along the (00l) direction. Deposition engineering of liquid tellurides enables thickness-tunable films, infilling of nanoscale vias, and film preparation on flexible substrates. Finally, we demonstrate cyclable and non-volatile prototype memory devices, achieving performance indicators such as resistance contrast and low reset energy on par with state-of-the-art sputtered PCM layers.

Synthesis and characterization of phase change memory cells

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge4 Sb6 Te7 as a Novel Epitaxial Nanocomposite

Achieving Multiple Resistance States in Phase-Change Memory Cell

Ab initio molecular dynamics and materials design for embedded phase-change memory

Phase-Change Memory from Molecular Tellurides

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Microstructure characterization, phase transition, and device application of phase-change memory materials