Abstract:Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications.

Achieving Multiple Resistance States in Phase-Change Memory Cell

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Design of Multi-States Storage Medium for Phase Change Memory

Synthesis and characterization of phase change memory cells

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Low reset current mushroom cell phase‐change memory (PCM) using fiber‐textured homostructure GeSbTe on highly oriented seed layer

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

High‐Throughput Screening for Phase‐Change Memory Materials

Phase change memory technology