Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Design of Multi-States Storage Medium for Phase Change Memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Configuration Effects of Superlattice‐like Phase Change Material Structure

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Phase Change Random Access Memory Cell With Superlattice-Like Structure

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Phase change memory technology

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Achieving Multiple Resistance States in Phase-Change Memory Cell

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Stacked Ge2Sb2Te5/GeTe Multi-Level Phase-Change Memory with Asymmetric Double-Heater

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory