Abstract:Phase‐change memory (PCM), using the fast and reversible transition between crystal and glass to store binary data, is a promising candidate for next‐generation information storage and computing technologies. Recording more than one bit of information on each memory cell, known as multilevel cell (MLC) technology, can greatly increase the data density of PCMs. In this paper, the MLC capability in a phase change material Ge‐Ga‐Sb (GGS) is explored. Using the “SET” operation with increasing voltage amplitudes on this PCM cell in a 250 nm pillar structure device, three resistance levels are achieved and can be stabilized within large operating voltage windows, allowing large tolerance of SET voltage variation which may lead to the overlap of the neighboring resistance levels. It is discovered that the additional resistance level other than “0” and “1” is enabled by compositional phase separation in the nanocrystalline GGS, as revealed via atom probe tomography and electronic microscopy. The device also shows small resistance drift (ν = 0.025) in amorphous state, about four times lower than prototypical Ge‐Sb‐Te‐based PCMs, stabilizing it against time variation. Meanwhile, high thermal stability (Tc ≈ 300 °C) in GGS‐based device can also facilitate the practical applications in some extreme conditions.

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Multi-step Phase-Change Behavior in Ga30Sb70/SnSe2 Nanocomposite Multilayer Thin Films

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Multi-level phase-change memory with ultralow power consumption and resistance drift

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Design of Multi-States Storage Medium for Phase Change Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Sb 7 Te 3 /znsb Multilayer Thin Films for High Thermal Stability and Long Data Retention Phase-Change Memory

Successive crystallization in indium selenide thin films for multi-level phase-change memory

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Resistance Drift-Reduced Multilevel Storage and Neural Network Computing in Chalcogenide Phase Change Memories by Bipolar Operation

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip