12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Zhitang Song,Daolin Cai,Yan Cheng,Lei Wang,Shilong Lv,Tianjiao Xin,Gaoming Feng

DOI: https://doi.org/10.1039/d1nr00100k

IF: 6.7

2021-01-01

Nanoscale

Abstract:128 Mb Phase Change Memory (PCM) chips show potential for many applications in artificial intelligence.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Zhitang Song,Daolin Cai,Yan Cheng,Lei Wang,Shilong Lv,Tianjiao Xin,Gaoming Feng

DOI: https://doi.org/10.1039/d1nr90100a

IF: 6.7

2021-01-01

Nanoscale

Abstract:Correction for ‘12-state multi-level cell storage implemented in a 128 Mb phase change memory chip’ by Zhitang Song et al. , Nanoscale , 2021, DOI: 10.1039/d1nr00100k.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Design of Multi-States Storage Medium for Phase Change Memory

Jie Feng,Yun-Feng Lai,Bao-Wei Qiao,Bing-Chu Cai,Yin-Yin Lin,Ting-Ao Tang,Bomy Chen

DOI: https://doi.org/10.1143/jjap.46.5724

IF: 1.5

2007-01-01

Japanese Journal of Applied Physics

Abstract:A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked phase change films with different amorphous resistivity. The amorphous resistivity of each phase change layer was selected to make the stacked films crystallize successively with the increase of current, and so obtain four resistance states. The thickness of each phase change layer was also optimized to ensure enough resistance difference between neighboring storage state. The thermal conduction simulation was performed, and the results indicate that the stacked Si–Sb–Te films with suitable composition, resistivity and thickness in each layer can crystallize successively with the increase of current and realize multi-states storage in PCM. A memory cell with stacked film structure (Si16Sb33Te51/Si4Sb46Te50/Si11Sb39Te50) was prepared. The film thicknesses of Si16Sb33Te51, Si4Sb46Te50 and Si11Sb39Te50 were optimized to be 40, 80, and 20 nm, respectively. The current–voltage (I–V) characteristics and the resistance–current (R–I) characteristics were measured. The results confirmed the four-state storage capability of the memory cell with this stacked film structure.
Energy-efficient Multi-Level Cell Phase-Change Memory System with Data Encoding.

Jue Wang,Xiangyu Dong,Guangyu Sun,Dimin Niu,Yuan Xie

DOI: https://doi.org/10.1109/iccd.2011.6081394

2011-01-01

Abstract:Phase-change memory (PCM) is one of the most promising technologies among emerging non-volatile memories. Recently, the technology of multi-level cell (MLC) for PCM has been developed and a high capacity memory system can be implemented by storing multiple bits in a cell. However, programming MLC PCM involves the program-and-verify scheme. Thus, the energy of programming intermediate states in MLC PCM is considerably larger than that of single-level cell (SLC) PCM. To mitigate the MLC energy overhead, we propose an energy-efficient PCM architecture using data encoding write based on the observation that there are significant value-dependent energy variations in programming MLC PCM. In addition, data comparison write (DCW) is adopted to enhance the effectiveness of the proposed data encoding architecture for MLC PCM. Simulation results show that this encoding architecture achieves 9.6% average energy saving (up to 19.8%) on the plain MLC PCM system, and 12.9% average energy saving (up to 26.7%) on the DCW-adopted MLC PCM system
Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

LIU Xin,ZHOU Peng,LIN Yin-yin,TANG Ting-ao,LAI Yun-feng,QIAO Bao-wei,FENG Jie,CAI Bing-cu,Bomy Chen

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2008.01.018

2008-01-01

Abstract:Two approaches are proposed for multilevel storage based on phase change technology.The steady intermediate levels between the conventional amorphous state and crystalline state of Chalcogeinide are realized by changing the structure or material of the cell based on.In comparison with the conventional implementation of multi-level storage,the approaches proposed increase the reliability,signal-to-noise,storage density,and significantly simplify peripheral circuits.They will be promising for potential application.
Phase change memory technology

Geoffrey W. Burr,Matthew J. Breitwisch,Michele Franceschini,Davide Garetto,Kailash Gopalakrishnan,Bryan Jackson,Bulent Kurdi,Chung Lam,Luis A. Lastras,Alvaro Padilla,Bipin Rajendran,Simone Raoux,Rohit S. Shenoy

DOI: https://doi.org/10.1116/1.3301579

2010-03-29

Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Materials Science
Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Yang Hongxin,Luping Shi,Lee Hock Koon,Zhao Rong,Minghua Li,Jianming Li,Lim Kian Guan,Chong Tow Chong

DOI: https://doi.org/10.1149/2.0151512jss

IF: 2.2

2015-01-01

ECS Journal of Solid State Science and Technology

Abstract:Lateral phase change memory (PCM) has attracted a lot of interest due to its simpler fabrication process and lower current. Researchers are trying to increase the storage capacity of lateral PCM. This paper proposed a novel super-lattice like (SLL) structure for lateral PCM to achieve multi-level storage. Lateral PCM with SLL structure incorporated with N-doped Sb70Te30 and ZnS-SiO2 has been fabricated and tested. Both tested static I-V curve and dynamic pulse mode R-V curve show multi states existing in the device. Electrical and thermal simulations have been done for this device. Simulation results show that different resistance level can be found in this device with different states of phase change bridges. With increasing periods of SLL structure, more states can be achieved.
Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Lai Yun-Feng,Feng Jie,Qiao Bao-Wei,Huang Xiao-Gang,Cai Yan-Fei,Lin Yin-Yin,Tang Ting-Ao,Cai Bing-Chu,Chen Bomy

DOI: https://doi.org/10.1088/0256-307x/23/9/046

2006-01-01

Chinese Physics Letters

Abstract:The multiple-stage storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.
Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Keyuan Ding,Jiangjing Wang,Yuxing Zhou,He Tian,Lu,Riccardo Mazzarello,Chunlin Jia,Wei Zhang,Feng Rao,Evan Ma

DOI: https://doi.org/10.1126/science.aay0291

IF: 56.9

2019-01-01

Science

Abstract:Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.
Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Lu Wang,Ge Ma,Senhao Yan,Xiaomin Cheng,Xiangshui Miao

DOI: https://doi.org/10.1021/acsami.4c11087

2024-10-09

Abstract:In the era of big data, the amount of global data is increasing exponentially, and the storage and processing of massive data put forward higher requirements for memory. To deal with this challenge, high-density memory and neuromorphic computing have been widely investigated. Here, a gradient-doped multilayer phase-change memory with two-level states, four-level states, and linear conductance evolution using different pulse operations is proposed. The mechanism of multilevel states is revealed through high-resolution transmission electron microscopy (HRTEM) and finite-element analysis (FEA), which show that the sequential phase change among different sublayers is realized due to the different physical properties of the sublayers with different doping concentrations. Taking advantage of the devices' linear conductance evolution characteristic, a handwritten digit (28 × 28 pixel) recognition task is implemented with a high learning accuracy of 93.46% by building a simulated artificial neural network made up of this gradient-doped multilayer phase-change memory. It is proved that this gradient-doped multilayer phase-change memory is capable of both binary multilevel digital storage and brain-inspired analog in-memory computing in the same device, enabling reconfigurable applications in the future.
Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Cheng Chen,Chenchen Xie,Houpeng Chen,Siqiu Xu,Xi Li,Zhenchao Sui,Zhitang Song

DOI: https://doi.org/10.1109/ted.2022.3232080

IF: 3.1

2023-01-28

IEEE Transactions on Electron Devices

Abstract:Phase change memory (PCM) provides unique advantages in embedded, mass storage, and in-memory computing. Resistance drift and noise are decreasing the resistance ratio of PCM cell in amorphous and crystalline state, thereby reducing the readout window and data reliability, especially making obstacles to multilevel storage and neural network computing applications. A novel linear-like circuit is proposed to reduce drift coefficient and noise significantly and enhance the adjacent conductance ratio of the 16-level multilevel storage technology. Test results show that the drift coefficient reduced by 78%, and the noise reduced by three orders of magnitude. By constructing a PCM-based spiking recurrent neural network (SRNN) neural network in PyTorch, we achieved 97.4% accuracy, demonstrating that linear-like circuit could suppress drift and noise and improve the multilevel storage performance, which reduces the training loss despite PCM nonidealities.

engineering, electrical & electronic,physics, applied
Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Qingyu Wu,Chenchen Xie,Xi Li,Houpeng Chen,Li Xie,Qian Wang,Zhenchao Sui,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1109/ted.2023.3288514

IF: 3.1

2023-07-29

IEEE Transactions on Electron Devices

Abstract:Multilevel cell (MLC) phase change memory (PCM) not only helps in reducing the cost-per-bit of novel nonvolatile memory but also proves to be well-suited for neuromorphic computing, due to its continuously adjustable conductance. However, conventional MLC PCM devices suffer from significant bottlenecks associated with process variability, device loss, energy efficiency, and speed, which hinder their further development. This article proposes a hybrid programming algorithm for MLC PCM devices that employs one-shot preprogram and graded iterations to speed up the convergence of intermediate conductance while consuming lower power and experiencing less device loss. Test experiments conducted on a 64M-cell PCM chip, operating at 4 bits/cell, demonstrate that the proposed scheme is effective in reducing program time and power consumption by 82.3% and 82.6%, respectively, compared to traditional program schemes. Furthermore, the classification of handwritten MNIST datasets using PCM synapses yielded an accuracy of 94.22%, which was further improved to 97.32% by limiting the weight range through software optimization.

engineering, electrical & electronic,physics, applied
Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Xiangjin Wu,Asir Intisar Khan,Hengyuan Lee,Chen-Feng Hsu,Huairuo Zhang,Heshan Yu,Neel Roy,Albert V. Davydov,Ichiro Takeuchi,Xinyu Bao,H.-S. Philip Wong,Eric Pop

DOI: https://doi.org/10.1038/s41467-023-42792-4

IF: 16.6

2024-01-22

Nature Communications

Abstract:Abstract Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge 4 Sb 6 Te 7 ), to achieve record-low power density ≈ 5 MW/cm 2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 10 8 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge 4 Sb 6 Te 7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.

multidisciplinary sciences
Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Yi Lv,Qian Wang,Houpeng Chen,Chenchen Xie,Shenglan Ni,Xi Li,Zhitang Song

DOI: https://doi.org/10.3390/mi12091085

IF: 3.4

2021-09-09

Micromachines

Abstract:Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operation technologies have been proposed. However, they only mitigate the influence on data through read and write operations after resistance drift occurs. In this paper, we consider the working principle of multilevel storage for PCM and present a novel 2T2R structure circuit to increase the storage density and reduce the influence of resistance drift fundamentally. To realize 3-bit per cell storage, a wide range of resistances were selected as different states of phase change memory. Then, we proposed a 4:3 compressing encoding scheme to transform the output data into binary data states. Therefore, the designed 2T2R was proven to have optimized storage density and data reliability by monitoring the conductance distribution at four time points (1 ms, 1 s, 6 h, 12 h) in 4000 devices. Simulation results showed that the resistance drift of our proposed 2T2R structure can significantly improve the storage density of multilevel storage and increase the data reliability of phase change memory.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

XU Le,XIE Yu-feng,LIN Yin-yin

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2010.02.010

2010-01-01

Abstract:A 2B2R structure using complementary memory cells and bipolar transistors has been designed.Utilizing the three-level feature of PCR (Phase Change Resistor) and using the ratio definition of states,it realizes four-level storage.In this scheme,the phase change memory has reached the density of 1T1R four-level storage without the increasing of chip area.The influence of process variation on the reading operation has been optimized.The advantages of small area,high reliability and high density have been combined.All these issues will make phase change memory more competitive and promising in the high-density and high-reliability applications.
Toward Single‐Cell Multiple‐Strategy Processing Shift Register Powered by Phase‐Change Memory Materials

Shao-Xiang Go,Qiang Wang,Kejie Huang,Tae Hoon Lee,Natasa Bajalovic,Desmond K. Loke

DOI: https://doi.org/10.1002/aisy.202200353

IF: 7.298

2023-01-01

Advanced Intelligent Systems

Abstract:Modern innovations are built on the foundation of computers. Compared to von Neumann architectures having separate storage and processing units, in‐memory operation utilizes the same primary structure for data storage and register operations, therefore promising to decrease the energy cost of computing in data centers significantly. While various studies centered on exploring novel device architectures, designing suitable material platforms is extremely challenging. Herein, all four material (M) states of a phase‐change material (PCM) in data storage and register operations are utilized and a combined M state‐based model framework for developing in‐memory operation is demonstrated, along with nonvolatile, reprogrammable single‐cell shift register operations. A previously unachieved multiple‐level‐per‐volt different‐initial‐state multilevel set process with further computing in the M state‐based platform is realized. The simplest case of a programmable shift register configuration is demonstrated with a serial‐in–serial‐out processing strategy, as well as more complex reprogrammable processing schemes using the M state‐type platform, showing previously unreported nonvolatile shift register types with multiple processing approaches. This paves the way for development of next‐generation low‐power‐electronic systems using two‐terminal‐based semiconductor materials.
A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

HONG Yang,LIN Yin-yin,TANG Ting-ao

DOI: https://doi.org/10.3969/j.issn.0427-7104.2006.01.011

2006-01-01

Abstract:A novel ratio-oriented definition based on 2T2R (two transistors & two phase change resistors(PCR)) phase change memory(PCM) cell structure is proposed to gain a high density by multilevel storage.In this novel solution,no reference is needed and superb reliability remains still as conventional 2T2R,which is crucial when feature size scales to nanometer technology node.A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible,and further optimization has been carried out.In addition,based on the ratio-oriented definition,a simpler and faster Error Correction Codes(ECC) can be realized with All-Error-Detection(AED) feasible.
Microstructure characterization, phase transition, and device application of phase-change memory materials

Kai Jiang,Shubing Li,Fangfang Chen,Liping Zhu,Wenwu Li

DOI: https://doi.org/10.1080/14686996.2023.2252725

IF: 7.821

2023-09-19

Science and Technology of Advanced Materials

Abstract:Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation. We certify that the submitted manuscript is truly original, unpublished, and not being considered for publication elsewhere.

materials science, multidisciplinary
In-memory Computing Based on Photonic-Electronic Hybrid Phase-Change Cells.

Bai-Qian Wang,Xian-Bin Li,Hong-Bo Sun

DOI: https://doi.org/10.1016/j.scib.2023.08.058

IF: 18.9

2023-01-01

Science Bulletin

Abstract:In-memory computing based on emerging non-volatile memory arrays holds a great promise to cope with the drastically increased demand for data processing.Phase-change material(PCM)is a leading candidate for in-memory computing,which utilizes the amorphous-crystalline phase transition and the associated changes in electrical resistance or optical transmission for data encoding[1].The flagship PCM is Ge2Sb2Te5(GST).In comparison with PCM electronic devices,the data throughput can be largely boosted by leveraging parallel computing in the photonic waveguide devices based on the wavelength division multiplexing scheme.
Achieving Multiple Resistance States in Phase-Change Memory Cell

Ke Wang,Xiao Dong Han,Ze Zhang,Liang Cai Wu,Bo Liu,Zhi Tang Song,Song Lin Feng

DOI: https://doi.org/10.1143/JJAP.48.074501

IF: 1.5

2009-01-01

Japanese Journal of Applied Physics

Abstract:Ge2Sb2Te5 (GST)-based phase-change random access memory (PCM) cells were successfully fabricated by a standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) process. The bottom electrode contacts (BECs) of the PCM cells are tungsten heaters with hollow columns filled with SiO2 and Ge. An approach of multiple resistance states (MRSs) was demonstrated. It was revealed and simulated that the observed MRS, in fact, derives from the hollow tungsten BEC architecture. The variance of electrical resistance between the MRSs can be as high as two orders. With a proposed model, our research demonstrated a simple but applicable concept of building a more stable multiple storage (MS) PCM cell by simply tuning the contact area between the BEC and GST. (C) 2009 The Japan Society of Applied Physics
Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

W. J. Wang,D. Loke,L. T. Law,L. P. Shi,R. Zhao,M. H. Li,L. L. Chen,H. X. Yang,Y. C. Yeo,A. O. Adeyeye,T. C. Chong,A. L. Lacaita

DOI: https://doi.org/10.1109/iedm.2012.6479143

2012-01-01

Abstract:Phase-change memory (PCM) represents one of the best candidates for a “universal memory”. However, its slow SET speed, high RESET power, and high resistance drift present key challenges towards this ambition. Here, grain-engineered Ge 2 Sb 2 Te 5 is exploited to control the crystallization kinetics, and electrical properties of PCM. We report 120 % higher SET speeds with respect to conventional scaling. Good stability (140°C), 30 % RESET power reduction, and 2X lower resistance drift were also achieved. A 4-state/2-bit multilevel cell was further demonstrated. This provides a route to making high-density PCM devices.

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Design of Multi-States Storage Medium for Phase Change Memory

Energy-efficient Multi-Level Cell Phase-Change Memory System with Data Encoding.

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Phase change memory technology

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

Toward Single‐Cell Multiple‐Strategy Processing Shift Register Powered by Phase‐Change Memory Materials

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Microstructure characterization, phase transition, and device application of phase-change memory materials

In-memory Computing Based on Photonic-Electronic Hybrid Phase-Change Cells.

Achieving Multiple Resistance States in Phase-Change Memory Cell

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities