Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Exploit Imbalanced Cell Writes to Mitigate Write Disturbance in Dense Phase Change Memory

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Design of Multi-States Storage Medium for Phase Change Memory

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Discrete Charge States In Nanowire Flash Memory With Multiple Ta2o5 Charge-Trapping Stacks

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Correction: Research progress in architecture and application of RRAM with computing-in-memory

Multi‐bit Storage in Reset Process of Phase Change Access Memory (PRAM)

Improved performance of Si-NC memory using a novel two-step program scheme

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels