Abstract:Due to the scalability and large leakage power, dynamic random-access memory (DRAM) has a lot of challenges in scaling. As an alternative, phase change memory (PCM) has demonstrated promising potential to serve as the main memory in deep submicrometer regime. The broad resistance range of PCM cells enables several cell modes with various densities, pertaining to multiple level cell (MLC), triple state cell (TSC), and single level cell (SLC). High-density mode outperforms low-density ones in terms of capacity and cost-per-bit, but suffers from a weaker cell endurance. Wear leveling strategies are proposed to enhance the memory endurance but encounter more challenges with the aggravating process variation. Due to endurance variations, physical domains are fabricated with irregular tenacity. As a result, balanced write traffic, which is the objective of traditional wear leveling, cannot fully exploit the PCM endurance since the weak parts will be worn out sooner than others. In this paper, considering process variation, we propose a cell morphing based wear leveling scheme. Cell morphing refers to the cell mode transformation between high density (e.g., MLC) and low densities (e.g., TSC and SLC). Instead of redistributing write operations, the proposed wear leveling scheme dynamically transforms weak and frequently written portions into low-density mode for endurance benefits. Multitier cell morphing schemes are proposed to support mode transformation among multiple density levels. The experimental results show 236% endurance improvement for single-tier cell morphing and 209% for two-tier cell morphing with 2% low-density page percentage, when compared with the most related work.

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Wear Relief for High-Density Phase Change Memory Through Cell Morphing Considering Process Variation

A SPICE Model of Phase Change Memory for Neuromorphic Circuits

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

Resistance Drift-Reduced Multilevel Storage and Neural Network Computing in Chalcogenide Phase Change Memories by Bipolar Operation

Patterned Cells for Phase Change Memories.

Phase change memory technology

State Asymmetry Driven State Remapping in Phase Change Memory.

Design Methodologies for Reliable and Energy-efficient PCM Systems

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023)

Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip