Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Design of Multi-States Storage Medium for Phase Change Memory

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Achieving Multiple Resistance States in Phase-Change Memory Cell

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Phase change memory technology

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

The Design and Application on Interfacial Phase‐Change Memory

Characteristics of Ga–Sb–Te Films for Phase-Change Memory