Abstract:The explosive growth in the market of smart mobile phones and other portable electronic devices has attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies. Phase change memory (PCM), which utilizes the large optical and electrical property contrast between crystalline and amorphous phases of phase change materials to store information, has been considered as a promising candidate for the future NVM device [1]. Recently, Min Zhu et al [2] found that the PCM cell which based on TiSbTe(TST) alloy shows much faster Set operation speed and lower Reset power, compared with Ge2Sb2Te5 with the same size. In the present work, the surface morphology, phase and simulated images of the TST film were obtained using AFM technique. The in-situ annealed TEM morphology analyses were used in combination with the electron-diffraction Radial distribution function (RDF) to investigate the structural evolution from amorphous to the polycrystalline phases [3]. The structural evolution characteristics of the TST films were studied as a function of the annealing temperature. Furthermore, the atomic arrangement and defects of the polycrystalline state were revealed through an advanced Cs-corrected scanning transmission electron microscope (STEM) attached with an energy dispersive X-ray (EDX) spectroscope. In conclusion, our results are valuable for understanding the fast, reversible phase-change process of TST materials and also for designing new memory devices. [1] Wuttig, M. & Yamada, N., Nature Mater. 6 (2007)824–832. [2] M. Zhu et al, Nat. Commun. 5 (2014), 4086. [3] L. Zhang et al, Journal of Alloys and Compounds. 537 (2012) 71–75. B21-P-08 doi:10.1093/jmicro/dfv252

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