Abstract:Phase‐change memory (PCM), using the fast and reversible transition between crystal and glass to store binary data, is a promising candidate for next‐generation information storage and computing technologies. Recording more than one bit of information on each memory cell, known as multilevel cell (MLC) technology, can greatly increase the data density of PCMs. In this paper, the MLC capability in a phase change material Ge‐Ga‐Sb (GGS) is explored. Using the “SET” operation with increasing voltage amplitudes on this PCM cell in a 250 nm pillar structure device, three resistance levels are achieved and can be stabilized within large operating voltage windows, allowing large tolerance of SET voltage variation which may lead to the overlap of the neighboring resistance levels. It is discovered that the additional resistance level other than “0” and “1” is enabled by compositional phase separation in the nanocrystalline GGS, as revealed via atom probe tomography and electronic microscopy. The device also shows small resistance drift (ν = 0.025) in amorphous state, about four times lower than prototypical Ge‐Sb‐Te‐based PCMs, stabilizing it against time variation. Meanwhile, high thermal stability (Tc ≈ 300 °C) in GGS‐based device can also facilitate the practical applications in some extreme conditions.

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Design of Multi-States Storage Medium for Phase Change Memory

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Multi-State Data Storage of Ge2sb2te5/Ga30sb70 Multilayer Films for Phase Change Memory

Sb7te3/Ge Multilayer Films for Low Power and High Speed Phase-Change Memory

Multi-Step Resistance Memory Behavior in Ge2sb2te5/Gete Stacked Chalcogenide Films

Improvement of Phase Change Properties of Stacked Ge2sb2te5/Znsb Thin Films for Phase Change Memory Application

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Multi-step Phase-Change Behavior in Ga30Sb70/SnSe2 Nanocomposite Multilayer Thin Films

SbSe/ZnSb Stacked Thin Films with Multi-Level Phase Transition for High Density Phase Change Memory Applications

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Stacked Ge2Sb2Te5/GeTe Multi-Level Phase-Change Memory with Asymmetric Double-Heater

Sb 7 Te 3 /znsb Multilayer Thin Films for High Thermal Stability and Long Data Retention Phase-Change Memory

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Multi-level Storage and Ultra-High Speed of Superlattice-Like Ge50Te50/Ge8Sb92 Thin Film for Phase-Change Memory Application

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory