Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Configuration Effects of Superlattice‐like Phase Change Material Structure

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Low Thermal Conductivity Phase Change Memory Superlattices

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

A Nano-Scale-Sized 3d Element for Phase Change Memories

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures