High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications
Suyang Sun,Xiaozhe Wang,Yihui Jiang,Yibo Lei,Siyu Zhang,Sanjay Kumar,Junying Zhang,En Ma,Riccardo Mazzarello,Jiang-Jing Wang,Wei Zhang
DOI: https://doi.org/10.1038/s41524-024-01387-3
IF: 12.256
2024-08-27
npj Computational Materials
Abstract:Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded phase-change memory applications, conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures ( T x ). Although doping with additional alloying elements could improve the amorphous stability, it also increases the tendency towards compositional partitioning and phase separation. Recently, a two-dimensional (2D) layered compound CrGeTe 3 (CrGT) was developed as a PCM, showing a high T x ~ 276 °C with an inverse change in resistive-switching character upon phase transition. Here, we report a high-throughput materials screening for 2D layered phase-change chalcogenides. We aim to clarify whether the high T x and the inverse electrical resistance contrast are intrinsic features of 2D PCMs. In total, twenty-five 2D chalcogenides with CrGT trilayer structures have been identified from a large database. We then focused on selected layered tellurides by performing thorough ab initio simulations and experimental investigations and confirming that their amorphous phase indeed has a much higher T x than conventional PCMs. We attribute this enhanced amorphous stability to the structurally complex nuclei required to render crystallization possible. Overall, we regard InGeTe 3 as a balanced 2D PCM with both high thermal stability and large electrical contrast for embedded memory applications.
materials science, multidisciplinary,chemistry, physical