Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

A Superlattice Interfacial Phase Change Material with Low Power Consumption

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Low Thermal Conductivity Phase Change Memory Superlattices

Coherent phonon study of (GeTe)$_{l}$(Sb$_{2}$Te$_{3}$)$_{m}$ interfacial phase change memory materials

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb 2 Te 3 -GeTe superlattices

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Energy Bandpass Filtering in Superlattice Phase Change Memories

Weyl Node Assisted Conductivity Switch in Interfacial Phase Change Memory with Van Der Waals Interfaces

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

The Design and Application on Interfacial Phase‐Change Memory

Phase‐Change Superlattice Materials Toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Chalcogenides Phase Change Materials for PICs

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

Native Filament-to-dielectric Interfaces in Phase Change Superlattice Memories

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films