Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Native Filament-to-dielectric Interfaces in Phase Change Superlattice Memories

Low Thermal Conductivity Phase Change Memory Superlattices

First-principles Prediction of the Native Filament: Dielectric Interfaces for the Possible Filamentary Switching Mechanism in Chalcogenide Selector Devices

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Configuration Effects of Superlattice‐like Phase Change Material Structure

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice

Layer‐Switching Mechanisms in Sb2Te3

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

A Superlattice Interfacial Phase Change Material with Low Power Consumption

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films