Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Phase Transformation in Mg–Sb Thin Films

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

C-Sb Materials As Candidate for Phase-Change Memory

Superlattice-like films with high thermal stability and ultralow power consumption via adding graphite carbon nanolayers

Low Thermal Conductivity Phase Change Memory Superlattices

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Research on the flexible phase change memory devices based on Ge2Sb2Te5/Mg35Sb65 superlattice-like thin films

Configuration Effects of Superlattice‐like Phase Change Material Structure

Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications