Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Characteristics of Si-Sb-Te Films for Phase Change Memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Tixsb2te Thin Films for Phase Change Memory Applications

Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Role of the Nano Amorphous Interface in the Crystallization of Sb2te3 Towards Non-Volatile Phase Change Memory: Insights from First Principles

Si–Sb–Te films for phase-change random access memory

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Ultra-Stable, Endurable, and Flexible Sb 2 Te x Se 3- x Phase Change Devices for Memory Application and Wearable Electronics

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Low Thermal Conductivity Phase Change Memory Superlattices