Characteristics of Si-Sb-Te Films for Phase Change Memory

Feng Jie,Zhang Yin,Qiao Baowei,Cai Yanfei,Lin Yinyin,Tang Tingao,Cai Bingchu,Chen Bomy

DOI: https://doi.org/10.1557/proc-0918-h08-04

2006-01-01

Abstract:The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb 2 Te 3 . The melting temperature of Si-Sb-Te decreased to ~550ºC lower than 640ºC of Ge 2 Sb 2 Te 5 . The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400ºC, which is less than ~7% of the film thickness change of Ge 2 Sb 2 Te 5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge 2 Sb 2 Te 5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switching was performed in the devices with Si-Sb-Te films. The device with Si 14.3 Sb 28.6 Te 57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10µm-sized device.