Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb2Te3 material were designed and prepared by inserting the Sn15Sb85 layer. The thermal and electrical properties of superlattice-like Sb2Te3/Sn15Sb85 phase-change films can be adjusted by controlling the thickness ratio of Sb2Te3/Sn15Sb85. In comparison to the monolayer Sb2Te3 film, the multilayer layer Sb2Te3/Sn15Sb85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb2Te3/Sn15Sb85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn15Sb85 layers restrains grain growth and refines the grain size. The multilayer Sb2Te3/Sn15Sb85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb2Te3. Phase-change memory cells based on the [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge2Sb2Te5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn15Sb85 layer can significantly improve the crystallization properties of Sb2Te3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers.

Nanoarchitectonics of Binary Semiconductor Sb–Y for the Application of Phase-Change Memory Device

Phase-change behavior in Si/Sb 80 Te 20 nanocomposite multilayer films

Phase-change Behavior in Si/Sb80Te20 Nanocomposite Multilayer Films

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

Phase-change Behaviors of Sb80Te20/SbSe Nanocomposite Multilayer Films

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Improved Thermal Stability and Fast Phase Change Speed of Y-doped Sb7Se3 Thin Film for Phase Change Memory Applications

C-Sb Materials As Candidate for Phase-Change Memory

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Zn-doped Sb70Se30 Thin Films with Multiple Phase Transition for High Storage Density and Low Power Consumption Phase Change Memory Applications

Investigation of Multilayer SnSb4/ZnSb Thin Films for Phase Change Memory Applications

The Study of Phase Change Properties of Sb70Se30 Thin Film with Scandium and Aluminum Doping

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2se3 Interlayers

Multi-step Phase-Change Behavior in Ga30Sb70/SnSe2 Nanocomposite Multilayer Thin Films

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Crystallization behavior and structural characteristics of Cr-doped Sb70Se30 thin films for phase change memory

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Crystallization Process of Superlattice-Like Sb/SiO 2 Thin Films for Phase Change Memory Application