Abstract:Chalcogenide glasses have garnered significant interest as potential materials for the creation of high-density, three-dimensional stackable cross-point array structures, particularly for memory devices. Chalcogenide glasses have emerged as promising candidates for high-density, three-dimensional stackable cross-point array structures. In this study, we delve into the intricate electrical switching behaviour of Se 86− x Te 14 In x ( x = 0, 2, 4, 6) chalcogenide glasses in the form of thin films, employing Aluminium (Al) as the top and bottom electrodes. Exhibiting the remarkable phase-changing characteristics of the material, the films showed memory-type switching behaviour. Remarkably, with an incremental change in Indium concentration from 0 to 6%, a linear reduction in the threshold voltage (V th ) from 12.75 to 4.80 V was observed, underscoring the tunability of switching properties with respect to compositional variations. When the Al top electrode was substituted with Silver (Ag) the thin films' electrical behaviour changed and this alteration instigated a shift in the switching mechanism. The films changed their characteristics from memory to threshold-switching behaviour, presenting a unique phenomenon in the realm of Se-Te-based chalcogenide glassy alloys. The presence of an active electrode (Ag) at the top facilitated the formation of temporary Ag filaments, making the device a programmable metallization cell (PMC) with remarkable threshold-switching capabilities with higher selectivity (∼ 5 × 10 3 ) and endurance of 10 4 cycles. The observed tunable attributes, contingent on the precise adjustment of Indium concentration and film thickness, underscore the immense potential of these films as highly efficient and adaptable unidirectional selectors and memory devices.

A Study on Optical Properties of Sb2Se3 Thin Films and Resistive Switching Behavior in Ag/Sb2Se3/W Heterojunctions

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb 2 Te 3 /Ag heterojunctions.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Study on the modulation of sb phase change thin films and device properties by MoTe2 heterojunction layer

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Tunable electrode-dependent switching characteristics of Se-Te-In chalcogenide thin films

Comparing the role of annealing on the transport properties of polymorphous AgBiSe2 and monophase AgSbSe2

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Characteristics of Si-Sb-Te Films for Phase Change Memory

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

C-Sb Materials As Candidate for Phase-Change Memory

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Si–Sb–Te films for phase-change random access memory

Resistive switching in the devices of Ag/amorphous Ag<sub>30</sub>Ge<sub>17</sub>Se<sub>53</sub> films/Pt