Abstract:Phase change memory (PCM) is an exceptional universal memory innovation that offers qualities like fast speed and non-volatility. But major obstacle still exists in achieving better thermal stability and rapid switching at the same time. Therefore, it is crucial to investigate new materials with enhanced properties. To overcome the contrast of access time between storage systems and memories, storage class memory concept based on emerging nonvolatile memory technology has been introduced. Resistive switching has gained much awareness in last decade due to its application in PCM technologies. Investigation of resistive switching on novel Te (1−x) (GeSe 0.5 )Sc x (x = 0, 0.05, 0.1, 0.15) quaternary alloy has been analyzed in this paper. Material has revealed electrical resistivity contrast of ∼10 3 orders of magnitude that offers better thermal stability than the majority of other phase transition alloys. Additionally, current-voltage (I-V) properties and voltage dependent threshold switching support an incredibly fast threshold switching operation. Switching is observed at 18–30 V and threshold voltage has been noticed to decrease (10–12 V) with increasing temperature. From XPS study, it can be observed that binding energy is shifting towards lower energies by 0.25 eV. Sc makes the GeTeSe parent material appealing for next-generation high-speed, non-volatile, and improved thermal stability memory applications.

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Structure, bonding and electronic characteristics of amorphous Se

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Characteristics of Si-Sb-Te Films for Phase Change Memory

Successive crystallization in indium selenide thin films for multi-level phase-change memory

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

A GexSe1-x switch-only-memory technology through polarized atomic distribution

Ab initio molecular dynamics and materials design for embedded phase-change memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Flexible Electronics Applications of Ge‐rich and Se‐Substituted Phase‐change Materials in Non‐volatile Memories

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films