Abstract:This work covers ovonic threshold switches (OTSs), from basics to developments and future outlook. It explores OTS devices incorporating various chalcogens and describes how their characteristics vary by material. Engineering strategies, including elemental doping, electrode modifications, post‐treatment, and multilayer designs, are discussed. Potential of selector‐only memory is also emphasized here for superior scalability and performance in 3D X‐point memory applications. The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide‐based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post‐treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector‐only memory (SOM) is examined, which offers better scalability and performance than the existing one‐memory and one‐selector structure, which combines an OTS with phase‐change memory. Moreover, a cost‐effective 3D vertical X‐point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here.

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Chalcogenide Ovonic Threshold Switching Selector

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

A GexSe1-x switch-only-memory technology through polarized atomic distribution

The enhanced performance of a Si–As–Se ovonic threshold switching selector

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications