Abstract:This work covers ovonic threshold switches (OTSs), from basics to developments and future outlook. It explores OTS devices incorporating various chalcogens and describes how their characteristics vary by material. Engineering strategies, including elemental doping, electrode modifications, post‐treatment, and multilayer designs, are discussed. Potential of selector‐only memory is also emphasized here for superior scalability and performance in 3D X‐point memory applications. The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide‐based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post‐treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector‐only memory (SOM) is examined, which offers better scalability and performance than the existing one‐memory and one‐selector structure, which combines an OTS with phase‐change memory. Moreover, a cost‐effective 3D vertical X‐point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here.

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Ultrahigh Drive Current and Large Selectivity in GeS Selector

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond

The role of arsenic in the operation of sulfur-based electrical threshold switches

High Driving Current Selector Based on As-Implanted HfO 2 Thin Film for 3D Phase Change Memory

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (∼0.4 nA) and Low Drift Characteristics

12.7 MA/cm 2 On-Current Density and High Uniformity Realized in AgGeSe/Al 2 O 3 Selectors

Stacking the MoS2/GeSe2 Vertical Van Der Waals Heterostructure for Memory Device

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Nitrogen: a Promising Doping Strategy for High-Performance Ovonic Threshold Switching Selectors

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

Super Nonlinear Electrodeposition Diffusion-Controlled Thin-Film Selector

High-Uniformity Threshold Switching HfO<sub>2</sub>-Based Selectors with Patterned Ag Nanodots

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching