Abstract:As the continuous miniaturization of floating-gate transistors approaches a physical limit, new innovations in device architectures, working principles, and device materials are in high demand. This study demonstrated a nonvolatile memory structure with multilevel data storage that features a van der Waals gate architecture made up of a partially oxidized surface layer/indium selenide (InSe) van der Waals interface. The key functionality of this proof-of-concept device is provided through the generation of charge-trapping sites via an indirect oxygen plasma treatment on the InSe surface layer. In contrast to floating-gate nonvolatile memory, these sites have the ability to retain charge without the help of a gate dielectric. Together with the layered structure, the surface layer with charge-trapping sites facilitates continual electrostatic doping in the underlying InSe layers. The van der Waals gating effect is further supported by trapped charge-induced core-level energy shifts and relative work function variations obtained from operando scanning X-ray photoelectron spectroscopy and Kelvin probe microscopy, respectively. On modulating the amount of electric field-induced trapped electrons by the electrostatic gate potential, eight distinct storage states remained over 3000 s. Moreover, the device exhibits a high current switching ratio of 106 within 11 cycles. The demonstrated characteristics suggest that the engineering of an InSe interface has potential applications for nonvolatile memory.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16336?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16336</a>.InSe flake thickness determination; InSe device in a test tube for indirect oxygen plasma treatment; IDS–T of the pristine InSe device in response to various VG values; retention time comparison at high and low drain voltages; effect of the trapped carrier on the IDS–VG property; lifetime fitting of traps; and lifetime measurements for the InSe memory device reproducibility test (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16336/suppl_file/am0c16336_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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