Abstract:Chalcogenide glasses have garnered significant interest as potential materials for the creation of high-density, three-dimensional stackable cross-point array structures, particularly for memory devices. Chalcogenide glasses have emerged as promising candidates for high-density, three-dimensional stackable cross-point array structures. In this study, we delve into the intricate electrical switching behaviour of Se 86− x Te 14 In x ( x = 0, 2, 4, 6) chalcogenide glasses in the form of thin films, employing Aluminium (Al) as the top and bottom electrodes. Exhibiting the remarkable phase-changing characteristics of the material, the films showed memory-type switching behaviour. Remarkably, with an incremental change in Indium concentration from 0 to 6%, a linear reduction in the threshold voltage (V th ) from 12.75 to 4.80 V was observed, underscoring the tunability of switching properties with respect to compositional variations. When the Al top electrode was substituted with Silver (Ag) the thin films' electrical behaviour changed and this alteration instigated a shift in the switching mechanism. The films changed their characteristics from memory to threshold-switching behaviour, presenting a unique phenomenon in the realm of Se-Te-based chalcogenide glassy alloys. The presence of an active electrode (Ag) at the top facilitated the formation of temporary Ag filaments, making the device a programmable metallization cell (PMC) with remarkable threshold-switching capabilities with higher selectivity (∼ 5 × 10 3 ) and endurance of 10 4 cycles. The observed tunable attributes, contingent on the precise adjustment of Indium concentration and film thickness, underscore the immense potential of these films as highly efficient and adaptable unidirectional selectors and memory devices.

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Chalcogenide Ovonic Threshold Switching Selector

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

Chalcogenides Phase Change Materials for PICs

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

First-principles screening for sustainable OTS materials

Chalcogenide glass based integrated photonics

Transient Structural Transition in Ovonic Threshold Switching Glass

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Tunable electrode-dependent switching characteristics of Se-Te-In chalcogenide thin films

Super Nonlinear Electrodeposition Diffusion-Controlled Thin-Film Selector

First-principles Prediction of the Native Filament: Dielectric Interfaces for the Possible Filamentary Switching Mechanism in Chalcogenide Selector Devices

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

Robust Design of High-Performance Optoelectronic Chalcogenide Crystals from High-Throughput Computation

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials