Abstract:Flexible electronics are essential for wearable setup. Due to the high nonlinear property, threshold switching (TS) selectors can effectively suppress interference currents and are compatible to large‐scale integration, enabling them to be promising for circuit applications. However, it is still a big challenge to develop flexible TS selectors with both high electrical performance and flexibility endurance due to the lack of suitable materials and processes. Organic–inorganic hybrid perovskites (OIHPs) show great potential in flexible TS selectors owing to fast ion migration, low‐temperature synthetic processes, and excellent mechanical flexibility. Here, the flexible TS selectors with an Ag/OIHP/indium tin oxide/polyethylene naphthalate structure are demonstrated by a low‐cost solution process. The devices exhibit ultrahigh endurance (1010 cycles), excellent mechanical bending stability (104 times), as well as fast switching speed (40 ns). One‐selector one‐memristor is assembled to perform the write and read operation, clearly indicating nearly free of interference current. The working mechanism of the selectors is also carefully studied by energy dispersive spectroscopy and dynamic Monte Carlo model, showing that the high electrical performance should be ascribed to the low migration barrier of Ag in OHIP films. This work should provide a new promising approach in developing large‐scale integration of flexible high‐performance electronic devices. Flexible selector as a critical part has begun to attract increasing attention for suppressing the interferent current and enabling precise addressing in array integration of memories and sensors. Here, an ultraendurable flexible high‐performance threshold switching selector based on solution‐processed organic–inorganic hybrid perovskites is reported, showing great potential for application in high‐density array integration of flexible electronic devices.

First-principles screening for sustainable OTS materials

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Chalcogenide Ovonic Threshold Switching Selector

Accelerated Screening of Ternary Chalcogenides for High-Performance Optoelectronic Materials

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Screening Switching Materials with Low Leakage Current and High Thermal Stability for Neuromorphic Computing

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

Revealing the Structure and Electronic Characteristics of Te-rich Threshold Switching Materials for High-Density Integration

The enhanced performance of a Si–As–Se ovonic threshold switching selector

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Data-driven Discovery of Photoactive Quaternary Oxides using First-principles Machine Learning

Exploring material compositions for synthesis using oxidation states

Screening Promising Thermoelectric Materials in Binary Chalcogenides through High-Throughput Computations

The role of arsenic in the operation of sulfur-based electrical threshold switches

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

Nitrogen: a Promising Doping Strategy for High-Performance Ovonic Threshold Switching Selectors