Abstract:Ovonic threshold switching (OTS) selectors play an important role in the integration of advanced three-dimensional memory. Selectors based on tellurium (Te)-containing materials exhibit significant promise due to their low threshold voltages and superior consistency. Here we have theoretically studied the structure and electronic properties of a typical OTS material, amorphous GeTe6, to explore the switching mechanisms using ab initio molecular dynamics simulations. The results indicate that Ge atoms tend to bond with Te atoms, forming stable chemical bonds. The Te-centered clusters are predominantly in the form of distorted octahedrons, while the Ge-centered clusters are in the form of both octahedrons and tetrahedrons. Notably, the proportion of tetrahedrons within the 4-coordinated Ge-centered clusters reaches an impressive 66.9%. These tetrahedrons are randomly dispersed throughout the simulated cell, leading to a stable amorphous configuration. The mid-gap state observed in the mobility bandgap originates from the atomic chain composed of both over-coordinated Ge and Te atoms. It is the inherent stability of the chemical environment within amorphous GeTe6 that enables it to maintain its amorphous phase under a repeated threshold voltage, a characteristic that distinguishes it from non-OTS materials, such as amorphous tellurium. Our findings provide an in-depth understanding of the structure and electronic characteristics of amorphous GeTe6, which can promote the design and application of the Te-rich threshold switching materials. Most Ge-centered tetrahedrons in amorphous GeTe6 are formed by stable Ge-Te bonds, ensuring the stability of amorphous configurations.

Revealing the Structure and Electronic Characteristics of Te-rich Threshold Switching Materials for High-Density Integration

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Sustained response to intravenous alendronate in postmenopausal osteoporosis.

Structural and electronic characteristics of amorphous Ge8Sb2Te11

Atomic-scale investigation on endurance mechanism of the GeTe x -based OTS device by Si doping

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

The local structural differences in amorphous Ge-Sb-Te alloys

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials

Structure, Bonding Nature and Transition Dynamics of Amorphous Te

Understanding the role of GeSbTe layer on atomic switch through current sweep mode measurement for enhanced threshold switching device