Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

The origin of hexagonal phase and its evolution process in Ge 2 Sb 2 Te 5 alloy

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

The local structural differences in amorphous Ge-Sb-Te alloys

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Ab initio molecular dynamics and materials design for embedded phase-change memory

Structural and electronic characteristics of amorphous Ge8Sb2Te11

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials

Direct observation of structural transitions in the phase change material Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Mapping the band structure of GeSbTe phase change alloys around the Fermi level