Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb2Te3 material were designed and prepared by inserting the Sn15Sb85 layer. The thermal and electrical properties of superlattice-like Sb2Te3/Sn15Sb85 phase-change films can be adjusted by controlling the thickness ratio of Sb2Te3/Sn15Sb85. In comparison to the monolayer Sb2Te3 film, the multilayer layer Sb2Te3/Sn15Sb85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb2Te3/Sn15Sb85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn15Sb85 layers restrains grain growth and refines the grain size. The multilayer Sb2Te3/Sn15Sb85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb2Te3. Phase-change memory cells based on the [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge2Sb2Te5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn15Sb85 layer can significantly improve the crystallization properties of Sb2Te3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Bonding Nature and Optical Properties of As 2 Te 3 Phase‐change Material

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers.

Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties

Multiscale Simulations of Growth-Dominated Sb2Te Phase-Change Material for Non-Volatile Photonic Applications

Ab initio molecular dynamics and materials design for embedded phase-change memory

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

First-principles Study of the Liquid and Amorphous Phases of Sb2Te Phase Change Memory Material

Ab Initio Investigation of Amorphous Sb2te

Structure Effect of Cylindrical-Shaped GeSbTe Alloy on Phase Transition in Phase Change Memory

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Ab Initio Study of Sb2SexTe3−x (x=0, 1, 2) Phase Change Materials

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

The local structural differences in amorphous Ge-Sb-Te alloys

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation