Abstract:Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications.

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Ab initio molecular dynamics and materials design for embedded phase-change memory

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Study of Er-Sb and Er-Te parental alloys used in phase change memory

High‐Throughput Screening for Phase‐Change Memory Materials

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Tailoring structure by the Zn-induced tetrahedron to enable high-stability and low-transition-energy of Sb 2 Te phase-change films

Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Investigation of thermoelectric properties in binary Sb-Te and Sn-Te alloys during crystallization process

Enhanced mechanical and thermoelectric properties enabled by hierarchical structure in medium-temperature Sb2Te3 based alloys