Abstract:Ge–Sb–Te alloys are widely used for data recording based on the rapid and reversible amorphous-to-crystalline phase transformation that is accompanied by increases in the optical reflectivity and the electrical conductivity. However, uncertainties about the optical band gaps and electronic transport properties of these phases have persisted because of inappropriate interpretation of reported data and the lack of definitive analytical studies. In this paper we characterize the most widely used composition, Ge2Sb2Te5, in its amorphous, face-centered-cubic, and hexagonal phases, and explain the origins of inconsistent or unphysical results in previous reports. The optical absorption in all of these phases follows the relationship αhν∝(hν−Egopt)2, which corresponds to the optical transitions in most amorphous semiconductors as proposed by Tauc, Grigorovici, and Vancu [Tauc et al., Phys. Status Solidi 15, 627 (1966)], and to those in indirect-gap crystalline semiconductors. The optical band gaps of the amorphous, face-centered-cubic, and hexagonal phases are 0.7, 0.5, and 0.5eV, respectively. The subgap absorption in the amorphous phase shows an exponential decay with an Urbach slope of 81meV. We measured the photoconductivity of amorphous Ge2Sb2Te5 and determined a mobility-lifetime product of 3×10−9cm2∕V. The spectral photoconductivity shows a threshold at about 0.7eV, in agreement with our analysis of the optical band gap. The face-centered-cubic and hexagonal phases are highly conductive and do not show freeze-out; even at 5K the density of free carriers remains at 1019–1020cm−3, so these are degenerate semiconductors in which the Fermi level resides inside a band. In the hexagonal phase, the effect of free electrons on the Hall coefficient is significant at high temperatures. When the Hall data are fitted using the two-carrier analysis, the hole mobility is found to decrease slowly with temperature, as expected. The considerations discussed in this paper can be readily applied to study related chalcogenide materials.

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First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Multiscale Simulations of Growth-Dominated Sb2Te Phase-Change Material for Non-Volatile Photonic Applications

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

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Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

First principles study of the optical contrast in phase change materials

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Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

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High optical/color contrast of Sb2Te thin film and its structural origin

Theoretical Predictions of the Structural Stability and Property Contrast for Sb-rich Ge3Sb6Te5 Phase-Change Materials

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

Enhanced Optical Contrast of Ag-doped Ge-Sb-Se-Te Phase Change Films

Ab Initio Investigation of Amorphous Sb2te

Ab Initio Study of Sb2SexTe3−x (x=0, 1, 2) Phase Change Materials

Ab Initio Investigation of Amorphous and Crystalline Arsenic Sesqui‐Chalcogenides: Optical Properties Explained by Metavalent Bonding

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation.

Investigation on Ge 5− x Sb x Te 5 phase-change materials by first-principles method