Abstract:Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (<math> Ge 0.5 − x M x Te 0.5</math>) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of <math> Ge 0.5 − x M x Te 0.5</math> films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the <math> Ge 0.5 − x M x Te 0.5</math> systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix. Out of all the studied systems, Mo was the only metal to cluster within GeTe. Analysis of the Ge–Te bond lengths and volumes of the <math> Ge 0.5 − x M x Te 0.5</math> supercells shows that increasing the atomic concentration (2.08, 4.17, 6.25 at. %) of the different metals causes varied distortions of the crystal structure of GeTe that are accompanied by significant changes in the projected density of states. Computational predictions concerning metal solubility and the effect of metal incorporation on critical properties of GeTe are compared to experimental results in the literature (Cu, Mn, Mo, and Ti) and to transmission electron microscopy and transport data from newly characterized co-sputtered <math> Ge 0.5 − x Fe x Te 0.5</math> films. The computational predictions of decreasing solubility (Mn <math> ></math> Cu, Fe <math> ></math> Ti, Mo) shows good agreement with experimental observations (Mn, Cu <math> ></math> Fe <math> ></math> Ti, Mo), and <math> Ge 0.5 − x Fe x Te 0.5</math> films exhibited increased crystallization temperatures from pure GeTe.

Investigation on Ge 5− x Sb x Te 5 phase-change materials by first-principles method

The local structural differences in amorphous Ge-Sb-Te alloys

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Phase Change Behaviors of In-Ge-Sb-Te Alloy

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Comparison of Thermal Stability and Electrical Characterization Between Ge2sb2te5 and Ge1sb2te4 Phase-Change Materials

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

First-principles study and experimental characterization of metal incorporation in germanium telluride

A Study on Inorganic Phase-Change Resist Ge2Sb2(1-x)Bi2xTe5 and Its Mechanism.

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Origin of Short- and Medium-Range Order in Supercooled Liquid Ge3Sb2Te6 Using Ab Initio Molecular Dynamics Simulations.