Abstract:Chalcogenide alloy-based semiconductors have gained significant attention in recent decades due to its applications in phase change memory (PCM). Sb 2 Te 3 has proven to be an alternative to Static and Dynamic Random Access Memory, and can be a suitable candidate for commercial memory devices due to their fast switching speed. However, Sb 2 Te 3 suffers from low amorphous phase stability and high RESET current, which needs further improvement for high power efficiency. In this work, we have prepared (Sb 2 Te 3 ) 1-x (GeSe 2 ) x (x=0.06, 0.12, 0.18, 0.24, 0.3) films to investigate their phase change memory properties. The films showed a rise in transition temperature to transform from high resistive amorphous (RESET) to low resistive crystalline (SET) states with doping that leads to significant enhancement in amorphous phase stability. For 30% doping of GeSe 2 in Sb 2 Te 3 , the data retention temperature increases from 20.2 o C to 84.6 o C, and the resistance contrast also increases from 10 2 to 10 5 . The rise in electrical resistance with doping in the amorphous as well as crystalline states leads to a drop in threshold current (Ith) from 3.5 mA to 0.8 mA. This also reduces the RESET and SET currents. By analyzing the samples using finite element method, it was found out that the high resistance materials produce more heat, resulting in a lower write current in an energy-efficient PCM device.

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Encapsulation effects on Ge‐rich GeSbTe Phase‐Change Materials at high temperature

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Investigation Of Phase Transitions In Stacked Gete/Snte And Ge2se3/Snte Chalcogenide Films

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material