The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

GU Li-xin,ZHOU Xi-lin,ZHANG Bin,ZHANG Tao,LIU Xian-qiang,HAN Xiao-dong,WU Liang-cai,SONG Zhi-tang,ZHANG Ze
DOI: https://doi.org/10.3969/j.1000-6281.2013.03.002
2013-01-01
Abstract:By electrical resistivity measurement,X-ray diffraction techniques and advanced in situ TEM annealing techniques,the thermal stability of GeTe-Sb films with different Sb concentrations(0%,9.9%,21%,58%,72%,81.5%Sb) and their corresponding microstructures were thoroughly investigated.The crystallization temperature shows a summit when Sb concentration approximates 58%.After crystallized,the GeTe-0%Sb and GeTe-0%Sb films are identified as GeTe-type cubic structure.The GeTe-58%Sb,72%Sb and 81.5%Sb films are Sb-type rhombohedra structure.The in-situ TEM annealing experiments show that the optimization of the properties by tuning Sb concentration is related to the corresponding crystallization behavior change,indicating a promising way for material optimization.
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