Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Crystallization Kinetics of Ga–Sb–Te Films for Phase Change Memory

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Crystallization Kinetics of Amorphous Ga-Sb Films Extended for Phase-Change Memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Explosive Crystallization Characteristic of Ge–Cu–Te Thin Films for Phase-Change Memory

Crystallization Kinetics and X-Ray Photoelectron Spectroscopy of Ga2TeSb7 Thin Film

Thermal Properties And Structure Of Tega2sb7 Thin Films For Phase-Change Memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Improvement in thermal stability and crystallization mechanism of Sm doped GeSbTe thin films for phase change memory applications

Structure and Crystallization Kinetics of as‐deposited Films of the GeTe Phase Change Compound from Atomistic Simulations

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material

Preparation and Characterization of Gete4 Thin Films As A Candidate for Phase Change Memory Applications