Abstract:Non-volatile memory, which can simultaneously store data and compute in memory, is a promising candidate to break through “memory bottleneck”. However, its operation speed and thermal stability are still contradictory and difficult to meet the requirement of in-memory computing especially in high-temperature applications. In this work, optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 material is proposed, where the picosecond laser is used to perform the information recording/erasing operation based on the reversible phase-change characteristics while resistance signal is detected to realize the information readout. Results imply that the Cr doped Ge2Sb2Te5 film with Cr concentration of 10.7 at. % has high crystallization temperature (289 °C) and ten-year data-retention temperature (221 °C), low density-change rate (2.3%) and small resistance drift coefficients (0.022 at 85 °C, 0.056 at 120 °C, 0.070 at 150 °C, and 0.00131 for the laser induced SET state). The corresponding memory device has the SET/RESET operation speeds of as fast as 1820 ps/13 ps accompanied by the RESET/SET resistance ratio of higher than two orders of magnitude. The structural analyses indicate that Cr doping can suppress the growth of grains and reduce the grain size, improving the thermal stability of amorphous Ge2Sb2Te5 thin film while the octahedral/defective octahedral motif ensures its fast phase-change speed. Therefore, Cr doped Ge2Sb2Te5 based optoelectronic hybrid phase-change memory with superior thermal stability and ultrafast operation speed may be one of the promising solutions for in-memory computing.

Preparation and Characterization of Gete4 Thin Films As A Candidate for Phase Change Memory Applications

Gete4 As A Candidate for Phase Change Memory Application

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

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Investigation of HfO 2 doping on GeTe for phase change memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Thermal Properties And Structure Of Tega2sb7 Thin Films For Phase-Change Memory

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

Improved Performances of Ge2sb2te5 Based Phase Change Memory by W Doping

Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Study of Si-Doped Sb2te3 Films for Phase Change Memory