Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Modeling Heterogeneous Melting in Phase Change Memory Devices

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe -like superlattices for phase change memories

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Ab initio molecular dynamics and materials design for embedded phase-change memory

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses