Abstract:One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher operating temperatures is to enrich GST with additional germanium (GGST). This alloy crystallizes into a polycrystalline mixture of two phases, GST and almost pure germanium. In a previous work [R. Bayle et al., J. Appl. Phys. 128, 185101 (2020)], this crystallization process was studied using a multi-phase field model (MPFM) with a simplified thermal field calculated by a separate solver. Here, we combine the MPFM and a phase-aware electro-thermal solver to achieve a consistent multi-physics model for device operations in PCM. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations and the most important calibration curves that are used to assess the performance of a PCM cell.

What problem does this paper attempt to address?

### Problems the paper attempts to solve The paper aims to address the challenges of phase - change memory (PCM) operating in high - temperature environments. Specifically, the paper focuses on how to increase the crystallization temperature of Ge₂Sb₂Te₅ (GST) alloy by increasing the germanium (Germanium, Ge) content, so that it can operate stably at high temperatures exceeding 150 °C. GST is a material widely used in PCM, but due to its relatively low crystallization temperature (about 150 °C), it cannot meet the requirements for long - term high - temperature stability in some applications (such as the automotive market). When GST crystallizes spontaneously and unintentionally, the stored information will be lost. Therefore, through multi - physics field modeling of germanium - rich GST (GGST) alloy, its behavior at high temperatures is studied to achieve more stable storage performance. ### Main research contents 1. **Coupling of multi - phase - field model (MPFM) and electro - thermal model**: - The paper combines the multi - phase - field model (MPFM) and the electro - thermal model to achieve multi - physics field modeling of PCM device operations. This coupled model can more accurately simulate the operation process of PCM devices, especially reproduce the experimentally observed phenomena and evaluate the important calibration curves of PCM cell performance. 2. **Microstructure evolution of germanium - rich GST alloy**: - Through the multi - phase - field model, the microstructure evolution of GGST alloy under different conditions is studied, including the formation of crystal phases and the separation effect of germanium. These complex structural changes have a significant impact on device performance, so predictive modeling is very important for technological development and understanding the underlying mechanisms. 3. **Influence of thermal boundary resistance (TBR)**: - It is found that the thermal boundary resistance (TBR) plays a key role in the thermal management of PCM devices. TBR causes temperature discontinuities on both sides of the interface, especially at the micro - scale and under high heat - flux conditions, and this temperature jump is very significant. After introducing TBR into the model, the experimental measurement results can be more accurately reproduced. 4. **Temperature dependence of electrical conductivity and thermal conductivity**: - The paper discusses in detail the temperature dependence of the electrical conductivity and thermal conductivity of different materials (such as Ge, GST and GGST), and calibrates them with experimental data. Accurate modeling of these parameters is crucial for simulating the operation of PCM devices. ### Conclusion Through the above research, the paper provides a comprehensive multi - physics field model that can more accurately describe and predict the behavior of germanium - rich GST alloy at high temperatures, providing theoretical support and technical guidance for the development of high - performance PCM devices.

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