Abstract:Non-volatile memory, which can simultaneously store data and compute in memory, is a promising candidate to break through “memory bottleneck”. However, its operation speed and thermal stability are still contradictory and difficult to meet the requirement of in-memory computing especially in high-temperature applications. In this work, optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 material is proposed, where the picosecond laser is used to perform the information recording/erasing operation based on the reversible phase-change characteristics while resistance signal is detected to realize the information readout. Results imply that the Cr doped Ge2Sb2Te5 film with Cr concentration of 10.7 at. % has high crystallization temperature (289 °C) and ten-year data-retention temperature (221 °C), low density-change rate (2.3%) and small resistance drift coefficients (0.022 at 85 °C, 0.056 at 120 °C, 0.070 at 150 °C, and 0.00131 for the laser induced SET state). The corresponding memory device has the SET/RESET operation speeds of as fast as 1820 ps/13 ps accompanied by the RESET/SET resistance ratio of higher than two orders of magnitude. The structural analyses indicate that Cr doping can suppress the growth of grains and reduce the grain size, improving the thermal stability of amorphous Ge2Sb2Te5 thin film while the octahedral/defective octahedral motif ensures its fast phase-change speed. Therefore, Cr doped Ge2Sb2Te5 based optoelectronic hybrid phase-change memory with superior thermal stability and ultrafast operation speed may be one of the promising solutions for in-memory computing.

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

"Stickier"-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Enhanced Threshold Voltage of Zn-doped Ge2Sb2Te5phase-change Memory Deposited by Electron-Beam Evaporation

Recipe for ultrafast and persistent phase-change memory materials

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Boosting crystallization speed in ultrathin phase-change bridge memory device using Sb2Te3

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Modeling Heterogeneous Melting in Phase Change Memory Devices

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory