Abstract:Phase‐change memory is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with current manufacturing processes and the good scaling behavior. Despite intensive research efforts that are devoted to the modification of Ge2Sb2Te5 (GST) phase‐change material, the obtained improvements are still unsatisfactory for high‐performance applications. In this paper, SiC‐modification is first introduced to enhance the amorphous stability of GST without sacrificing its transition speed. Several enhancements can be demonstrated, including better thermal stability (10‐year data retention above 120 °C), lower RESET voltage (about 3.0 V at 20 ns pulse width), reduced volume change (smaller than 3.0%), and expected operation cycles (more than 1.0 × 105). According to the findings, the local bonding nature of Ge/Te atoms can be tuned by C/Si dopants through forming CGe and SiTe bonds. Apart from strengthening the atomic binding network for desirable data retention, the element interdiffusion is also effectively controlled and suppressed. Together with finer grains, smaller density change, and more uniform morphology, the modified structure transition finally contributes to the reduced switching voltage and long‐term endurance. Hence, it is envisaged that SiC‐doped GST with such advantages will give a competitive option for high‐density and high‐performance embedded memory.

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Improvement of Electrical Properties of the Ge2sb2te5 Film by Doping Si for Phase-Change Random Access Memory

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

SiC‐Doped Ge2Sb2Te5 Phase‐Change Material: A Candidate for High‐Density Embedded Memory Application

Improved Thermal Stability and Fast Phase Change Speed of Y-doped Sb7Se3 Thin Film for Phase Change Memory Applications

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation

Enhanced threshold voltage of Zn-doped Ge2Sb2Te 5 phase-change memory deposited by electron-beam evaporation

Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications

Sb7te3/Ge Multilayer Films for Low Power and High Speed Phase-Change Memory

Phase-change Behavior in Si/Sb80Te20 Nanocomposite Multilayer Films

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Phase-change behavior in Si/Sb 80 Te 20 nanocomposite multilayer films