Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping

Metrics for Quantification of By-Process Segregation in Ge-Rich GST

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

Unveiling the crystallization kinetics in Ge-rich Ge$_x$Te alloys by large scale simulations with a machine-learned interatomic potential

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Encapsulation effects on Ge‐rich GeSbTe Phase‐Change Materials at high temperature

Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization

Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process

Study of Ge‐rich GST Device‐Dependent Segregation for Industrial Grade Embedded PCM

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study