Abstract:Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications.

Study of Ge‐rich GST Device‐Dependent Segregation for Industrial Grade Embedded PCM

Metrics for Quantification of By-Process Segregation in Ge-Rich GST

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping

Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

Tailoring the Oxygen Concentration in Ge-Sb-O Alloys to Enable Femtojoule-Level Phase-Change Memory Operations

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

Flexible Electronics Applications of Ge‐rich and Se‐Substituted Phase‐change Materials in Non‐volatile Memories

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties

Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge 3Sb 2Te 5 for phase-change memory application

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

High‐Throughput Screening for Phase‐Change Memory Materials

Low reset current mushroom cell phase‐change memory (PCM) using fiber‐textured homostructure GeSbTe on highly oriented seed layer

Ab initio molecular dynamics and materials design for embedded phase-change memory

Electronic Properties of GST for Non-Volatile Memory