Abstract:Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next generation of embedded phase change memories because of their good thermal stability, allowing their use for the automotive applications. Several studies have investigated GGST crystallization, which takes place in several stages, including phase separation in the amorphous material, the crystallization of the cubic Ge and GST phases before a complete crystallization for higher thermal budget. So far, however, no information is available on the possible changes in density and thickness of such alloys. This paper investigates such variations in density and thickness for a N-doped GGST layer (GGSTN) during isothermal annealing, following the four main stages of its multistep crystallization process. X-ray reflectivity (XRR) and X-ray diffraction were employed for analysis. The study reveals that density and thickness exhibit distinct changes during crystallization, with density increasing by approximately 9% during transition from amorphous to crystalline states. These changes are attributed to alterations in layer morphology, particularly at the Ge crystallization temperature and at the onset of GST crystal formation. Additionally, at high thermal budgets, discrepancies between XRR analysis methods suggest the formation of a thin, lower density layer near the top interface of the GGSTN layer. These results provide insights into the structural evolution of the GGSTN layer, which is crucial for phase change random access memory applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the changes in density and thickness of nitrogen - doped germanium - rich germanium - antimony - tellurium alloy (N - doped Ge - rich GeSbTe, GGSTN) during the multi - step crystallization process. Specifically, the study focuses on how the density and thickness of the GGSTN layer change with its four - stage crystallization process during isothermal annealing. These changes are crucial for the application of phase - change random - access memory (PCRAM), because the changes in the density and thickness of the material will affect the mechanical stress, resistance drift, and void formation of the memory cell, and further affect the cycling stability of the memory cell. ### Research Background - **Phase - change materials (PCMs)**: These materials have been widely studied because of their significantly different optical and electrical properties between the amorphous and crystalline states. Since they can be rapidly and reversibly switched between these two states by Joule heating induced by electrical pulses, they are the key materials for phase - change random - access memory (PCRAM). - **Ge - rich GeSbTe alloy (GGST)**: This type of alloy is considered as the key material for the next - generation embedded phase - change memory because of its good thermal stability, especially suitable for automotive applications. - **Nitrogen - doping**: Nitrogen - doping can further improve the performance of GGST, improve the stability of the amorphous state, and provide better two - state contrast and excellent electrical characteristics. ### Research Methods - **X - ray reflectivity (XRR)**: Used to analyze the changes in density and thickness of the GGSTN layer. - **X - ray diffraction (XRD)**: Used to analyze the crystallization state and phase composition of the GGSTN layer. ### Main Findings - **Density change**: During the transition from the amorphous state to the crystalline state, the density increases by about 9%. This change is mainly attributed to the change in the layer morphology, especially at the germanium crystallization temperature and when the GST crystal begins to form. - **Thickness change**: The thickness change is relatively small, with a maximum increase of about 1 - 2%. - **Interface roughness**: As the thermal budget increases, the interface roughness between the GGSTN layer and the SiN capping layer increases, resulting in a change in the XRR signal. - **Formation of a new layer**: Under a high thermal budget, the differences between XRR analysis methods indicate that a thin low - density layer may be formed near the top of the GGSTN layer. ### Conclusion This study reveals the changes in density and thickness of the GGSTN layer during the multi - step crystallization process, and these changes are of great significance for understanding the structural evolution of phase - change materials and their performance in PCRAM applications. In particular, the increase in density and the small change in thickness help to explain the mechanical stress and resistance drift that may occur in phase - change materials in practical applications.

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