Abstract:Amorphous Ge8Sb92 thin films with various thicknesses were deposited by magnetron sputtering. The crystallization kinetics and optical properties of the Ge8Sb92 thin films and related scaling effects were investigated by an in situ thermally induced method and an optical technique. With a decrease in film thickness, the crystallization temperature, crystallization activation energy and data retention ability increased significantly. The changed crystallization behavior may be ascribed to the smaller grain size and larger surface-to-volume ratio as the film thickness decreased. Regardless of whether the state was amorphous or crystalline, the film resistance increased remarkably as the film thickness decreased to 3 nm. The optical band gap calculated from the reflection spectra increases distinctly with a reduction in film thickness. X-ray diffraction patterns confirm that the scaling of the Ge8Sb92 thin film can inhibit the crystallization process and reduce the grain size. The values of exponent indices that were obtained indicate that the crystallization mechanism experiences a series of changes with scaling of the film thickness. The crystallization time was estimated to determine the scaling effect on the phase change speed. The scaling effect on the electrical switching performance of a phase change memory cell was also determined. The current-voltage and resistance-voltage characteristics indicate that phase change memory cells based on a thinner Ge8Sb92 film will exhibit a higher threshold voltage, lower RESET operational voltage and greater pulse width, which implies higher thermal stability, lower power consumption and relatively lower switching velocity.

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films

Thickness Dependence and Crystallization Properties of Amorphous GeTe Thin Films on Silicon Dioxide

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Investigation of thermal stability and crystallization mechanism of Er-0.03(GeTe)(0.97) phase change material

Investigation of thermal stability and crystallization mechanism of Er<sub>0.03</sub>(GeTe)<sub>0.97</sub> phase change material

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

Layer Thickness Dependence of the Phase Separation and Phase Change Properties of Ge2Sb2Te5/TiN Superlattice-Like Thin Films

Crystallization Behaviors of Ga30sb70/Gete Nanocomposite Multilayer Thin Films

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Atomistic Insights Toward Strengthening of GeTe Phase Change Material by Impurity Doping and Grain Boundary Engineering

Effect of Mg35Sb65 Interlayer on the Thermal Stability and Scaling of Ge2Sb2Te5 Phase Change Thin Film

The Tunable Amorphous-Crystalline Transition Temperature by Indium-Doping on GeTe Thin Films.

Phase-change Behavior in Si/Sb80Te20 Nanocomposite Multilayer Films

Structure And Phonon Behavior Of Crystalline Gete Ultrathin Film

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Phase-change behavior in Si/Sb 80 Te 20 nanocomposite multilayer films

Phase Change and Optical Band Gap Behavior of Ge–Te–Ga Thin Films Prepared by Thermal Evaporation