Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

Low-bias electron transport properties of germanium telluride ultrathin films

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Spectrally-resolved dielectric function of amorphous and crystalline GeTe nanoparticle thin films

Germanium Based Field-Effect Transistors: Challenges and Opportunities

Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe -like superlattices for phase change memories

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Thickness‐Dependent Bandgap and Atomic Structure in Elemental Tellurium Films

Improvement of the thermal efficiency of Ge2Sb2Te5-based device by ultrathin carbon nanolayers

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

Thickness‐Dependent Band Gap and Atomic Structure in Elemental Tellurium Films

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

A Comparative Study on Electrical Transport Properties of Thin Films of Ge1sb2te4 and Ge2sb2te5 Phase-Change Materials

Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

Atomic mechanisms of fast diffusion of large atoms in Germanium

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

Insight into the Role of Oxygen in Phase-Change Material GeTe